MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SISA26DN-T1-GE3-VB
N-Channel 20V 100A 250W Surface Mount DFN3x3-8
DFN3x3-8RoHSActive
MOSFET N-CH 20V 100A DFN3x3-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SISA26DN-T1-GE3-VB
- Store part #
- C47993741
- Package / case
- DFN3x3-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C47993741
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹94.96 | ₹94.96 |
| 10+ | ₹78.45 | ₹784.50 |
| 30+ | ₹69.97 | ₹2,099.10 |
| 100+ | ₹61.72 | ₹6,172.00 |
| 500+ | ₹47.38 | ₹23,690.00 |
| 1,000+ | ₹44.77 | ₹44,770.00 |
1 × ₹94.96
₹94.96
excl. GST
₹112.05 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISA26DN-T1-GE3-VB
₹94.96 for 1 + GST
Specifications
- Drain to Source Voltage
- 20V
- Operating Temperature
- -55℃~+175℃
- Output Capacitance(Coss)
- 1.725nF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 6.5nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 970pF
- RDS(on)
- 2.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 81.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.29 g
Overview
Applications
- OR Gate Applications - Servers - DC/DC Converters
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Alternatives
Similar parts — check the datasheet before substituting.
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