MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VISHAYDatasheet (PDF)
SQS180ENW-T1_GE3
80V 72A 119W 8.67mΩ@10V 1 N-channel N-Channel PowerPAK1212-8SLW Single FETs, MOSFETs RoHS
PowerPAK1212-8SLWROHS3 CompliantActive
MOSFET N-CH 80V 72A PowerPAK1212-8SLW
- Manufacturer
- VISHAY
- Manufacturer part #
- SQS180ENW-T1_GE3
- Store part #
- C20346180
- Package / case
- PowerPAK1212-8SLW
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
75 in stock
#C20346180
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹160.96 | ₹160.96 |
| 10+ | ₹128.60 | ₹1,286.00 |
| 30+ | ₹110.79 | ₹3,323.70 |
| 100+ | ₹90.51 | ₹9,051.00 |
| 500+ | ₹81.71 | ₹40,855.00 |
| 1,000+ | ₹77.61 | ₹77,610.00 |
1 × ₹160.96
₹160.96
excl. GST
₹189.93 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SQS180ENW-T1_GE3
₹160.96 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Output Capacitance(Coss)
- 521pF
- Current - Continuous Drain(Id)
- 72A
- Ciss-Input Capacitance
- 3.092nF
- Pd - Power Dissipation
- 119W
- Reverse Transfer Capacitance (Crss)
- 37pF
- RDS(on)
- 8.67mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 56nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.083 g
Overview
Key features
- Trench-gate 4th generation power MOSFET
- AEC-Q101 qualified
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- Solderable gull-wing terminals
- 0.75mm thickness, low thermal resistance
- RoHS compliant
- Halogen-free
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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