Varnitronics
SST25VF010A-33-4I-SAE MICROCHIP
MICROCHIP

SST25VF010A-33-4I-SAE

1Mbit 2.7V~3.6V 33MHz SPI SOIC-8 Memory RoHS

SOIC-8ROHS CompliantActive

1 Mbit SPI Serial Flash

Manufacturer
MICROCHIP
Manufacturer part #
SST25VF010A-33-4I-SAE
Store part #
C481384
Package / case
SOIC-8
Category
Memory
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

20 in stock

#C481384

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹239.03₹239.03
10+₹203.76₹2,037.60
30+₹181.78₹5,453.40
100+₹159.13₹15,913.00
500+₹148.90₹74,450.00
1,000+₹144.55₹1,44,550.00

1 × ₹239.03

₹239.03

excl. GST

₹282.06 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 100 per tube

SST25VF010A-33-4I-SAE

₹239.03 for 1 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Memory Size
1Mbit
Voltage - Supply
2.7V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
33MHz
Data Retention - TDR (Year)
100 Years
Block Erase Time(tBE)
25ms
Standby Supply Current
8uA
Interface
SPI

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
100 / Tube
Sold per
Piece
Minimum order
1
Unit weight
0.166 g

Overview

SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pincount package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7-3.6V power supply.

Key features

  • Single 2.7-3.6V Read and Write Operations
  • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
  • 33 MHz Max Clock Frequency
  • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
  • Low Power Consumption:
  • Active Read Current: 7 mA (typical)
  • Standby Current: 8 μA (typical)
  • Flexible Erase Capability
  • Uniform 4 KByte sectors
  • Uniform 32 KByte overlay blocks
  • Fast Erase and Byte-Program:
  • Chip-Erase Time: 70 ms (typical)
  • Sector- or Block-Erase Time: 18 ms (typical)
  • Byte-Program Time: 14 µs (typical)
  • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
  • End-of-Write Detection – Software Status
  • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register
  • Software Write Protection – Write protection through Block-Protection bits in status register
  • Temperature Range
  • Commercial: 0℃ to +70℃
  • Industrial: -40℃ to +85℃
  • Extended: -20℃ to +85℃
  • Packages Available
  • 8-lead SOIC 150 mil body width
  • 8-contact WSON (5mm x 6mm)
  • All non-Pb (lead-free) devices are RoHS compliant

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