Varnitronics
MICROCHIP

SST25WF040B-40E/SN

4Mbit 1.65V~1.95V 40MHz SPI SOIC-8 Memory RoHS

SOIC-8ROHS3 CompliantActive

4 Mbit 1.8V SPI Serial Flash

Manufacturer
MICROCHIP
Manufacturer part #
SST25WF040B-40E/SN
Store part #
C631786
Package / case
SOIC-8
Category
Memory
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

Out of stock

#C631786

Stock & price checked 2 days ago

QuantityUnit pricePack price
1+₹299.13₹299.13
10+₹291.81₹2,918.10
30+₹286.87₹8,606.10
100+₹282.13₹28,213.00
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  • GST invoice with every order
  • Standard pack: 100 per tube
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Specifications

Operating Temperature
-40℃~+125℃
Memory Size
4Mbit
Voltage - Supply
1.65V~1.95V
Program / Erase Cycles
100,000 cycles
Clock Frequency
40MHz
Data Retention - TDR (Year)
20 Years
Page Programming Time (Tpp)
800us
Standby Supply Current
7uA
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
100 / Tube
Sold per
Piece
Minimum order
1
Unit weight
0.197 g

Overview

SST25WF040B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65 - 1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

Key features

  • Single Voltage Read and Write Operations - 1.65 - 1.95V
  • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3
  • High Speed Clock Frequency - 40MHz
  • Dual Input/Output Support - Fast-Read Dual-Output Instruction (3BH) - Fast-Read Dual I/O Instruction (BBH)
  • Superior Reliability - Endurance: 100,000 Cycles - Greater than 20 years Data Retention
  • Ultra-Low Power Consumption: - Active Read Current: 4 mA (typical) - Standby Current: 7 µA (typical) - Power-down Mode Standby Current: 2 µA (typical)
  • Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 64 KByte overlay blocks
  • Page Program Mode - 256 Bytes/Page
  • Fast Erase and Page-Program: - Chip-Erase Time: 400 ms (typical) - Sector-Erase Time: 40 ms (typical) - Block-Erase Time: 80 ms (typical) - Page-Program Time: 0.8 ms/ 256 bytes (typical)
  • End-of-Write Detection - Software polling the BUSY bit in Status Register
  • Hold Pin (HOLD#) - Suspend a serial sequence without deselecting the device
  • Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register
  • Software Write Protection - Write protection through Block-Protection bits in status register
  • Temperature Range - Industrial: 40℃ to +85℃ - Extended: -40℃ to +125℃
  • Packages Available - 8-lead SOIC (150 mils) - 8-contact USON (2mm x 3mm)
  • All devices are RoHS compliant

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