MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STB34NM60ND
N-Channel 600V 29A 190W Surface Mount TO-263
TO-263ROHS3 CompliantActive
MOSFET N-CH 600V 29A TO-263
- Manufacturer
- ST
- Manufacturer part #
- STB34NM60ND
- Store part #
- C2688643
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
923 in stock
#C2688643
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹430.53 | ₹430.53 |
| 10+ | ₹407.74 | ₹4,077.40 |
| 30+ | ₹394.17 | ₹11,825.10 |
| 100+ | ₹380.40 | ₹38,040.00 |
| 500+ | ₹374.17 | ₹1,87,085.00 |
| 1,000+ | ₹371.15 | ₹3,71,150.00 |
1 × ₹430.53
₹430.53
excl. GST
₹508.03 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
STB34NM60ND
₹430.53 for 1 + GST
Specifications
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 29A
- Ciss-Input Capacitance
- 2.785nF
- Pd - Power Dissipation
- 190W
- RDS(on)
- 110mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 80.4nC@10V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.002 g
Overview
These devices are N-channel FDmesh™ V power MOSFETs manufactured using STMicroelectronics (ST) MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting products feature extremely low on-resistance, unmatched among silicon-based power MOSFETs, and deliver superior switching performance thanks to their inherent fast-recovery body diode.
Applications
- Switching applications
Key features
- Best-in-class R DS(on) among fast recovery diode devices in TO-220 package
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capability
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