MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD11NM60ND
600V 10A 90W 450mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS
DPAKROHS3 CompliantActive
- Manufacturer
- ST
- Manufacturer part #
- STD11NM60ND
- Store part #
- C2971513
- Package / case
- DPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
42 in stock
#C2971513
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,037.95 | ₹1,037.95 |
| 10+ | ₹1,019.68 | ₹10,196.80 |
| 30+ | ₹1,007.64 | ₹30,229.20 |
| 100+ | ₹995.39 | ₹99,539.00 |
1 × ₹1,037.95
₹1,037.95
excl. GST
₹1,224.78 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
STD11NM60ND
₹1,037.95 for 1 + GST
Specifications
- Drain to Source Voltage
- 600V
- Output Capacitance(Coss)
- 445pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 850pF
- Pd - Power Dissipation
- 90W
- RDS(on)
- 450mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 30nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.531 g
Overview
This device is an N-channel FDmesh™ II power MOSFET, representing the second generation of MDmesh™ technology. This innovative power MOSFET combines a new vertical structure with the company's stripe layout, offering the advantages of low on-resistance and fast switching speed, while integrating an intrinsic fast-recovery body diode. As a result, it is well-suited for bridge topologies, particularly zero-voltage switching (ZVS) phase-shift converters.
Applications
- Switching applications
Key features
- Limited only by maximum allowable temperature
- World's best \mathsfRDS(on)^* area among fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capability
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Similar parts — check the datasheet before substituting.
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