MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STP13NM60ND
N-Channel 600V 11A 109W Through Hole TO-220
TO-220ROHS3 CompliantDiscontinued
MOSFET N-CH 600V 11A TO-220
- Manufacturer
- ST
- Manufacturer part #
- STP13NM60ND
- Store part #
- C3290250
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3 in stock
#C3290250
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹482.45 | ₹482.45 |
| 10+ | ₹416.18 | ₹4,161.80 |
| 30+ | ₹376.71 | ₹11,301.30 |
| 100+ | ₹336.82 | ₹33,682.00 |
| 500+ | ₹318.51 | ₹1,59,255.00 |
| 1,000+ | ₹310.23 | ₹3,10,230.00 |
1 × ₹482.45
₹482.45
excl. GST
₹569.29 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
STP13NM60ND
₹482.45 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 47pF
- Ciss-Input Capacitance
- 845pF
- Pd - Power Dissipation
- 109W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 11A
- Reverse Transfer Capacitance (Crss)
- 2.5pF
- RDS(on)
- 380mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 24.5nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Discontinued
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.75 g
Overview
These FDmesh™ II power MOSFETs with intrinsic fast-recovery body diode are manufactured using second-generation MDmesh™ technology. These innovative devices feature a new strip layout vertical structure with extremely low on-resistance and excellent switching performance. They are ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Applications
- Switching applications
Key features
- Industry-leading RDS(on) × area product among fast recovery diode devices worldwide
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capability
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
 | STP16N65M2#C2965309ST · TO-220-3 | ST | TO-220-3 | 5 | ₹410.54 · 5 in stock | View |
 | NCE65T360#C181929NCE · TO-220 | NCE | TO-220 | 372 | ₹152.97 · 372 in stock | View |
 | TK12E60W,S1VX(S#C5374700TOSHIBA · TO-220-3 | TOSHIBA | TO-220-3 | 133 | ₹168.62 · 133 in stock | View |
 | STP18N60M2#C726098ST · TO-220 | ST | TO-220 | 147 | ₹199.69 · 147 in stock | View |
 | STP13N60M2#C3280408ST · TO-220 | ST | TO-220 | 13 | ₹440.52 · 13 in stock | View |
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