MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

N-Channel 200V 150A 375W Through Hole TO-220AB
MOSFET N-CH 200V 150A TO-220AB
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C3280719
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹414.18 | ₹414.18 |
| 10+ | ₹403.96 | ₹4,039.60 |
| 30+ | ₹397.01 | ₹11,910.30 |
| 100+ | ₹390.06 | ₹39,006.00 |
1 × ₹414.18
₹414.18
excl. GST
₹488.73 incl. 18% GST
SUP90100E-GE3
₹414.18 for 1 + GST
These are N-channel enhancement-mode silicon-gate power MOSFETs. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are suitable for use in switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
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Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock