MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SUP90N04-3M3P-GE3-VB
N-Channel 40V 110A 200W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 40V 110A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SUP90N04-3M3P-GE3-VB
- Store part #
- C20755182
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C20755182
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹147.04 | ₹147.04 |
| 10+ | ₹125.08 | ₹1,250.80 |
| 50+ | ₹93.66 | ₹4,683.00 |
| 100+ | ₹82.89 | ₹8,289.00 |
| 500+ | ₹76.43 | ₹38,215.00 |
| 1,000+ | ₹72.99 | ₹72,990.00 |
1 × ₹147.04
₹147.04
excl. GST
₹173.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SUP90N04-3M3P-GE3-VB
₹147.04 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 40V
- Output Capacitance(Coss)
- 750pF
- Current - Continuous Drain(Id)
- 110A
- Ciss-Input Capacitance
- 2.9nF
- Pd - Power Dissipation
- 200W
- Reverse Transfer Capacitance (Crss)
- 310pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 130nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.2 g
Overview
Applications
- Synchronous rectification
- Power supply
Key features
- Trench power MOSFET
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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