Varnitronics
onsemi

UJ3C120080K3S

1.2kV 33A 254W 100mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

TO-247-3ROHS3 CompliantActive
Manufacturer
onsemi
Manufacturer part #
UJ3C120080K3S
Store part #
C44870514
Package / case
TO-247-3
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C44870514

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹2,536.56₹2,536.56
30+₹2,400.76₹72,022.80

1 × ₹2,536.56

₹2,536.56

excl. GST

₹2,993.14 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 30 per tube

UJ3C120080K3S

₹2,536.56 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
1.2kV
Output Capacitance(Coss)
100pF
Current - Continuous Drain(Id)
33A
Ciss-Input Capacitance
1.5nF
Pd - Power Dissipation
254W
Reverse Transfer Capacitance (Crss)
2.1pF
RDS(on)
100mΩ
Number
1 N-channel
Gate Charge(Qg)
51nC
Gate Threshold Voltage (Vgs(th))
6V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
30 / Tube
Sold per
Piece
Minimum order
1
Unit weight
1 g

Overview

This silicon carbide FET device is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a silicon MOSFET are co-packaged to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling it to serve as a true "drop-in replacement" for silicon IGBTs, silicon MOSFETs, SiC MOSFETs, or silicon superjunction devices. Housed in a TO247-3 package, the device offers extremely low gate charge and superior reverse recovery characteristics, making it highly suitable for switching inductive loads and any application requiring standard gate drive.

Applications

  • Electric vehicle charging
  • Photovoltaic inverters
  • Switched-mode power supplies
  • Power factor correction modules
  • Motor drives

Key features

  • Typical on-resistance R_DS(on),typ: 80 mΩ
  • Maximum operating temperature 175°C
  • Excellent reverse recovery characteristics
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protection: Human Body Model Class 2 and Charged Device Model Class C3
  • Lead-free, halogen-free, and RoHS compliant

Alternatives

Similar parts — check the datasheet before substituting.

UJ3C120080K3S#C6731596Qorvo · TO-247-3₹3,149.61 · 15 in stockView
IMW120R045M1#C476131Infineon · TO-247-3₹1,793.50 · 3 in stockView
IMW120R040M1HXKSA1#C6061982Infineon · TO-247-3₹1,855.72 · 30 in stockView
AIMW120R035M1HXKSA1#C3289085Infineon · TO-247-3-41₹5,481.04 · 5 in stockView
S2M0080120D#C5904995SMC · TO-247AD₹1,206.17 · 23 in stockView

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