MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
UTT30N10G-TA3-T-VB
N-Channel 100V 70A 3.35W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 70A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- UTT30N10G-TA3-T-VB
- Store part #
- C4355131
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C4355131
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹128.19 | ₹128.19 |
| 10+ | ₹104.11 | ₹1,041.10 |
| 50+ | ₹92.16 | ₹4,608.00 |
| 100+ | ₹80.23 | ₹8,023.00 |
| 500+ | ₹73.11 | ₹36,555.00 |
| 1,000+ | ₹69.54 | ₹69,540.00 |
1 × ₹128.19
₹128.19
excl. GST
₹151.26 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
UTT30N10G-TA3-T-VB
₹128.19 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 210pF
- Current - Continuous Drain(Id)
- 70A
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 3.35W
- Reverse Transfer Capacitance (Crss)
- 110pF
- RDS(on)
- 17mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.82 g
Overview
Applications
- Isolated DC/DC Converters
- N-Channel MOSFET
Key features
- TrenchFET Power MOSFET
- 175°C Junction Temperature
- Low Thermal Resistance Package
- 100% Rg Tested
Alternatives
Similar parts — check the datasheet before substituting.
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