MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
VBM165R02
N-Channel 650V 2A 45W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 650V 2A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBM165R02
- Store part #
- C516955
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
44 in stock
#C516955
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹69.27 | ₹69.27 |
| 10+ | ₹55.09 | ₹550.90 |
| 50+ | ₹45.11 | ₹2,255.50 |
| 100+ | ₹37.53 | ₹3,753.00 |
| 500+ | ₹34.13 | ₹17,065.00 |
| 1,000+ | ₹31.94 | ₹31,940.00 |
1 × ₹69.27
₹69.27
excl. GST
₹81.74 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
VBM165R02
₹69.27 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 2A
- Ciss-Input Capacitance
- 417pF
- Pd - Power Dissipation
- 45W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 4Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 11nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.736 g
Overview
Key features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | 1N65L-TA3-T-VB#C20755634VBsemi Elec · TO-220AB | VBsemi Elec | TO-220AB | 10 | ₹72.90 · 10 in stock | View |
 | SPP02N60C3-VB#C20755691VBsemi Elec · TO-220AB | VBsemi Elec | TO-220AB | 47 | ₹66.68 · 47 in stock | View |
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