MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
VBMB165R18
N-Channel 650V 16A 68W Through Hole TO-220F
TO-220FRoHSActive
MOSFET N-CH 650V 16A TO-220F
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBMB165R18
- Store part #
- C481038
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
40 in stock
#C481038
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹192.21 | ₹192.21 |
| 10+ | ₹160.07 | ₹1,600.70 |
| 50+ | ₹142.63 | ₹7,131.50 |
| 100+ | ₹122.68 | ₹12,268.00 |
| 500+ | ₹113.86 | ₹56,930.00 |
| 1,000+ | ₹109.86 | ₹1,09,860.00 |
1 × ₹192.21
₹192.21
excl. GST
₹226.81 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
VBMB165R18
₹192.21 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 205pF
- Current - Continuous Drain(Id)
- 16A
- Ciss-Input Capacitance
- 3.322nF
- Pd - Power Dissipation
- 68W
- Reverse Transfer Capacitance (Crss)
- 120pF
- RDS(on)
- 360mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.33 g
Overview
This P-channel MOSFET is designed to improve the overall efficiency of DC/DC converters and battery chargers using synchronous or conventional switching PWM controllers. Compared to other MOSFETs with similar RDS(ON) specifications, these MOSFETs offer faster switching speeds and lower gate charge. As a result, this MOSFET is easy and safe to drive (even at very high frequencies) and enables higher overall efficiency in DC/DC power supply designs.
Key features
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) R(on)×Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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