VNB35N07TR-E

The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using VIPower Mo Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.

Applications

• Drop-in replacement for standard power MOSFETs in DC to 50KHz applications
• Inductive load driving

Key features

• LINEAR CURRENT LIMITATION
• THERMAL SHUTDOWN
• SHORT CIRCUIT PROTECTION
• INTEGRATED CLAMP
• LOW CURRENT DRAWN FROM INPUT PIN
• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
• ESD PROTECTION
• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
• COMPATIBLE WITH STANDARD POWER MOSFET
• OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability
• LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to llim whatever the Input pin voltage
• OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: based on sensing the chip temperature and are not dependent on the input voltage. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C
• STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω
• ESD protection according to the Human Body model
• Ability to be driven from a TTL Logic circuit (with a small increase in Rds(on))