ZXGD3006E6TA

The ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load. The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with just 1mA input from a controller. Also, the turn-on and turn-off switching behavior of the IGBT can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction can be reduced.

Applications

• Gate driving IGBTs and SiC MOSFETs in DC-DC Converters in Electric Cars
• Gate driving IGBTs and SiC MOSFETs in Automotive Active Suspension Systems
• Gate driving IGBTs and SiC MOSFETs in Solar Inverters
• Gate driving IGBTs and SiC MOSFETs in Power Supplies Plasma Display Panel Power Modules

Key features

• High-Gain Buffer with Typically 4A Output from 1mA Input
• 40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering
• Emitter-Follower that is Rugged to Latch-Up / Shoot-Through Issues, and Delivers <10ns Propagation Delay Time
• Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances
• Near-Zero Quiescent Supply Current
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. “Green” Device
• Qualified to AEC-Q101 Standards for High Reliability
• An Automotive-Compliant Part is Available Under Separate Datasheet (ZXGD3006E6Q)