MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
BSC028N06LS3GATMA1-HXY
113W 60V 125A 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- BSC028N06LS3GATMA1-HXY
- Store part #
- C53262843
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
489 in stock
#C53262843
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹89.12 | ₹89.12 |
| 10+ | ₹72.42 | ₹724.20 |
| 30+ | ₹64.18 | ₹1,925.40 |
| 100+ | ₹55.95 | ₹5,595.00 |
| 500+ | ₹50.96 | ₹25,480.00 |
| 1,000+ | ₹48.36 | ₹48,360.00 |
1 × ₹89.12
₹89.12
excl. GST
₹105.16 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
BSC028N06LS3GATMA1-HXY
₹89.12 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.188nF
- Ciss-Input Capacitance
- 4.61nF
- Pd - Power Dissipation
- 113W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 125A
- Reverse Transfer Capacitance (Crss)
- 66pF
- RDS(on)
- 2.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 74.37nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.14 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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