MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IAUC120N06S5L032ATMA1-HXY
113W 60V 125A 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IAUC120N06S5L032ATMA1-HXY
- Store part #
- C51949319
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
133 in stock
#C51949319
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹141.01 | ₹141.01 |
| 10+ | ₹114.23 | ₹1,142.30 |
| 30+ | ₹100.72 | ₹3,021.60 |
| 100+ | ₹87.44 | ₹8,744.00 |
| 500+ | ₹79.51 | ₹39,755.00 |
| 1,000+ | ₹75.23 | ₹75,230.00 |
1 × ₹141.01
₹141.01
excl. GST
₹166.39 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
IAUC120N06S5L032ATMA1-HXY
₹141.01 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.188nF
- Ciss-Input Capacitance
- 4.61nF
- Pd - Power Dissipation
- 113W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 125A
- Reverse Transfer Capacitance (Crss)
- 66pF
- RDS(on)
- 2.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 74.37nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.148 g
Overview
IAUC120N06S5L032ATMA1 employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Key features
- Drain-source voltage VDS = 60V, drain current ID = 125A
- On-resistance RDS(ON) < 2.9 mΩ at gate-source voltage VGS = 10V
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | SIR662DP-T1-GE3-HXY#C53262842HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 288 | ₹198.98 · 288 in stock | View |
 | BSC028N06LS3GATMA1-HXY#C53262843HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 489 | ₹89.12 · 489 in stock | View |
 | DMT6004LPS-13-HXY#C53262847HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 193 | ₹127.05 · 193 in stock | View |
 | SIR182DP-T1-RE3-HXY#C53262849HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 181 | ₹99.45 · 181 in stock | View |
 | SIR182LDP-T1-RE3-HXY#C53262854HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 99 | ₹226.37 · 99 in stock | View |
Same category
