MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
HXY MOSFETDatasheet (PDF)
SIR662DP-T1-GE3-HXY
113W 60V 125A 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR662DP-T1-GE3-HXY
- Store part #
- C53262842
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
288 in stock
#C53262842
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹198.98 | ₹198.98 |
| 10+ | ₹170.73 | ₹1,707.30 |
| 30+ | ₹155.31 | ₹4,659.30 |
| 100+ | ₹137.94 | ₹13,794.00 |
| 500+ | ₹130.12 | ₹65,060.00 |
| 1,000+ | ₹126.64 | ₹1,26,640.00 |
1 × ₹198.98
₹198.98
excl. GST
₹234.80 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR662DP-T1-GE3-HXY
₹198.98 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.188nF
- Ciss-Input Capacitance
- 4.61nF
- Pd - Power Dissipation
- 113W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 125A
- Reverse Transfer Capacitance (Crss)
- 66pF
- RDS(on)
- 2.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 74.37nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.157 g
Alternatives
Similar parts — check the datasheet before substituting.
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