MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMC007N08LCDC
N-Channel 80V 64A 57W Surface Mount PQFN-8(3.3x3.3)
PQFN-8(3.3x3.3)ROHS3 CompliantActive
MOSFET N-CH 80V 64A PQFN-8(3.3x3.3)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMC007N08LCDC
- Store part #
- C890917
- Package / case
- PQFN-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C890917
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹409.61 | ₹409.61 |
| 10+ | ₹350.73 | ₹3,507.30 |
| 30+ | ₹315.52 | ₹9,465.60 |
| 100+ | ₹280.11 | ₹28,011.00 |
| 500+ | ₹263.81 | ₹1,31,905.00 |
| 1,000+ | ₹256.41 | ₹2,56,410.00 |
1 × ₹409.61
₹409.61
excl. GST
₹483.34 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMC007N08LCDC
₹409.61 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 521pF
- Ciss-Input Capacitance
- 3.07nF
- Pd - Power Dissipation
- 57W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 64A
- Reverse Transfer Capacitance (Crss)
- 40pF
- RDS(on)
- 6.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 44nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.5 g
Overview
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
- Primary DC−DC MOSFET
- Synchronous Rectifier in DC−DC and AC−DC Motor Drive
- Solar
Key features
- Shielded Gate MOSFET Technology
- Max RDS(on)=6.8 mΩ at VGS=10 V, ID=22 A
- Max RDS(on)=11.1 mΩ at VGS=4.5 V, ID=18 A
- 5 V Drive Capable
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | NTTFS5D6N08XLTAG#C50759353onsemi · WDFN-8(3.3x3.3) | onsemi | WDFN-8(3.3x3.3) | 35 | ₹208.80 · 35 in stock | View |
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