MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMS86310
N-Channel 80V 50A 96W Surface Mount Power-56-8
Power-56-8ROHS3 CompliantActive
MOSFET N-CH 80V 50A Power-56-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86310
- Store part #
- C606110
- Package / case
- Power-56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
451 in stock
#C606110
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹276.81 | ₹276.81 |
| 10+ | ₹255.06 | ₹2,550.60 |
| 30+ | ₹241.58 | ₹7,247.40 |
| 100+ | ₹227.68 | ₹22,768.00 |
| 500+ | ₹221.36 | ₹1,10,680.00 |
| 1,000+ | ₹218.53 | ₹2,18,530.00 |
1 × ₹276.81
₹276.81
excl. GST
₹326.64 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86310
₹276.81 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 693pF
- Ciss-Input Capacitance
- 6.29nF
- Pd - Power Dissipation
- 96W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 50A
- Reverse Transfer Capacitance (Crss)
- 45pF
- RDS(on)
- 4.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 66nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.133 g
Overview
This N-channel MOSFET is specifically designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Applications
- Main Switch - Synchronous Rectifier - Motor Switch
Key features
- Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
- Advanced package-silicon combination for low rDS(on) and high efficiency
- Next-generation enhanced body diode technology designed for soft recovery
- MSL1 robust package design
- 100% UII tested
- RoHS compliant
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