MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IRFB4019PBF
80W 150V 17A 95mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
TO-220-3ROHS3 CompliantActive
MOSFET N-CH 150V 17A TO-220-3
- Manufacturer
- Infineon
- Manufacturer part #
- IRFB4019PBF
- Store part #
- C153238
- Package / case
- TO-220-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
157 in stock
#C153238
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹138.98 | ₹138.98 |
| 10+ | ₹113.54 | ₹1,135.40 |
| 50+ | ₹90.70 | ₹4,535.00 |
| 100+ | ₹78.08 | ₹7,808.00 |
| 500+ | ₹70.48 | ₹35,240.00 |
| 1,000+ | ₹66.79 | ₹66,790.00 |
1 × ₹138.98
₹138.98
excl. GST
₹164.00 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRFB4019PBF
₹138.98 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 74pF
- Ciss-Input Capacitance
- 800pF
- Pd - Power Dissipation
- 80W
- Configuration
- Half-Bridge
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 17A
- Reverse Transfer Capacitance (Crss)
- 19pF
- RDS(on)
- 95mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 20nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4.9V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.64 g
Overview
This digital audio MOSFET is designed for Class D audio amplifier applications. The MOSFET employs the latest processing technology to achieve low on-resistance per unit silicon area. In addition, gate charge, body diode reverse recovery, and internal gate resistance have been optimized to improve key performance parameters of Class D audio amplifiers, such as efficiency, total harmonic distortion (THD), and EMI. Additional features of this MOSFET include a 175°C operating junction temperature and repetitive avalanche capability. Combined, these features make this MOSFET a highly efficient, robust, and reliable device for Class D audio amplifier applications.
Key features
- Key parameters optimized for Class-D audio amplifier applications
- Low on-resistance (R<sub>DSON</sub>) for improved efficiency
- Low gate charge (Q<sub>G</sub>) and switching charge (Q<sub>SW</sub>) for improved THD and efficiency
- Low reverse recovery charge (Q<sub>RR</sub>) for improved THD and reduced EMI
- 175°C operating junction temperature for enhanced durability
- Up to 200W per channel into 8Ω loads in half-bridge amplifier configurations
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | IPP17N25S3100AKSA1#C3288978Infineon · TO-220-3 | Infineon | TO-220-3 | 40 | ₹438.07 · 40 in stock | View |
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| STP26N60DM6#C2969959ST · TO-220-3 | ST | TO-220-3 | 6 | ₹1,122.84 · 6 in stock | View | |
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