MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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NexperiaDatasheet (PDF)
PBSM5240PFH,115
760mW 30V 660mA 370mΩ@4.5V 1 N-channel N-Channel SOT-1118 Single FETs, MOSFETs RoHS
SOT-1118ROHS3 CompliantActive
MOSFET N-CH 30V 660mA SOT-1118
- Manufacturer
- Nexperia
- Manufacturer part #
- PBSM5240PFH,115
- Store part #
- C551819
- Package / case
- SOT-1118
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
81 in stock
#C551819
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹87.60 | ₹87.60 |
| 10+ | ₹85.64 | ₹856.40 |
| 30+ | ₹84.12 | ₹2,523.60 |
| 100+ | ₹82.82 | ₹8,282.00 |
1 × ₹87.60
₹87.60
excl. GST
₹103.37 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
PBSM5240PFH,115
₹87.60 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 7.7pF
- Ciss-Input Capacitance
- 43pF
- Pd - Power Dissipation
- 760mW
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 660mA
- Reverse Transfer Capacitance (Crss)
- 4.8pF
- RDS(on)
- 370mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 890pC@4.5V
- Vgs
- ±8V
- Gate Threshold Voltage (Vgs(th))
- 700mV
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.084 g
Overview
PNP low V<sub>CEsat</sub> small signal breakthrough (BISS) transistor combined with N-channel trench MOSFET. The device is housed in a leadless medium-power DFN2020-6 (SOT1118) SMD plastic package.
Applications
- Load switch
- Battery-powered devices
- Power management
- Charging circuits
- Power switching (e.g., motors, fans)
Key features
- Ultra-low collector-emitter saturation voltage V<sub>CEsat</sub>
- High collector current capability I<sub>C</sub> and I<sub>CM</sub>
- Low heat dissipation, high energy efficiency
- Smaller PCB footprint compared to conventional transistors
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Similar parts — check the datasheet before substituting.
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