MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

N-Channel 650V 119A 565W Through Hole HiP247-4
SICFET N-CH 650V 119A HiP247-4
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C3281049
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹5,852.54 | ₹5,852.54 |
| 3+ | ₹5,284.64 | ₹15,853.92 |
| 30+ | ₹5,022.90 | ₹1,50,687.00 |
1 × ₹5,852.54
₹5,852.54
excl. GST
₹6,906.00 incl. 18% GST
SCTWA90N65G2V-4
₹5,852.54 for 1 + GST
This silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock