STD110N8F6

N-Channel 80V 80A 167W Surface Mount DPAK

DPAKROHS3 CompliantActive

MOSFET N-CH 80V 80A DPAK

Manufacturer: ST
Manufacturer part #: STD110N8F6
Store part #: C695940
Package / case: DPAK
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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15 in stock

#C695940

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹290.37	₹290.37
10+	₹254.32	₹2,543.20
30+	₹231.66	₹6,949.80
100+	₹208.56	₹20,856.00
500+	₹198.19	₹99,095.00
1,000+	₹193.66	₹1,93,660.00

Quantity (min 1)

1 × ₹290.37

₹290.37

excl. GST

₹342.64 incl. 18% GST

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Standard pack: 2,500 per reel

STD110N8F6

₹290.37 for 1 + GST

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Specifications

Operating Temperature: -55℃~+175℃
Drain to Source Voltage: 80V
Output Capacitance(Coss): 320pF
Current - Continuous Drain(Id): 80A
Ciss-Input Capacitance: 9.13nF
Pd - Power Dissipation: 167W
Reverse Transfer Capacitance (Crss): 225pF
RDS(on): 5.6mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 150nC@10V
Gate Threshold Voltage (Vgs(th)): 4.5V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 2,500 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.606 g

Overview

This device is an N-channel power MOSFET developed using STripFET F6 technology featuring a novel trench gate structure. The resulting power MOSFET exhibits extremely low RDS(ON) across all packages.

Applications

Switching applications

Key features

Ultra-low on-resistance
Ultra-low gate charge
High avalanche ruggedness
Low gate drive power loss

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