MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SPD11N10-HXY
100V 10A 40W 140mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SPD11N10-HXY
- Store part #
- C54582587
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
40 in stock
#C54582587
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹45.17 | ₹225.85 |
| 50+ | ₹36.18 | ₹1,809.00 |
| 150+ | ₹32.32 | ₹4,848.00 |
| 500+ | ₹27.52 | ₹13,760.00 |
| 2,500+ | ₹22.70 | ₹56,750.00 |
| 5,000+ | ₹21.42 | ₹1,07,100.00 |
5 × ₹45.17
₹225.85
excl. GST
₹266.50 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
SPD11N10-HXY
₹225.85 for 5 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 25pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 650pF
- Pd - Power Dissipation
- 40W
- Reverse Transfer Capacitance (Crss)
- 20pF
- RDS(on)
- 140mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 20.6nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.388 g
Overview
The SPD11N10 utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Applications
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Key features
- Drain-source voltage V<sub>DS</sub> = 100V, drain current I<sub>D</sub> = 10A
- On-resistance R<sub>DS(ON)</sub> < 160mΩ at gate-source voltage V<sub>GS</sub> = 10V
- On-resistance R<sub>DS(ON)</sub> < 170mΩ at gate-source voltage V<sub>GS</sub> = 4.5V
- High-density cell design for ultra-low R<sub>DS(ON)</sub>
- Fully characterized avalanche voltage and current
- Excellent package with good thermal dissipation
Alternatives
Similar parts — check the datasheet before substituting.
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