Varnitronics
SST25VF512A-33-4I-SAE MICROCHIP
MICROCHIP

SST25VF512A-33-4I-SAE

512Kbit 2.7V~3.6V 33MHz SPI SOIC-8 Memory RoHS

SOIC-8ROHS3 CompliantActive

512 Kbit SPI Serial Flash

Manufacturer
MICROCHIP
Manufacturer part #
SST25VF512A-33-4I-SAE
Store part #
C481386
Package / case
SOIC-8
Category
Memory
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

21 in stock

#C481386

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹203.62₹203.62
10+₹166.57₹1,665.70
30+₹146.28₹4,388.40
100+₹123.18₹12,318.00
500+₹112.93₹56,465.00
1,000+₹108.35₹1,08,350.00

1 × ₹203.62

₹203.62

excl. GST

₹240.27 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 100 per tube

SST25VF512A-33-4I-SAE

₹203.62 for 1 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Features
Write enable latch;Software write protection
Memory Size
512Kbit
Voltage - Supply
2.7V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
33MHz
Data Retention - TDR (Year)
100 Years
Block Erase Time(tBE)
25ms
Standby Supply Current
8uA
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
100 / Tube
Sold per
Piece
Minimum order
1
Unit weight
0.155 g

Overview

SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512A SPI serial flash memory is manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF512A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF512A device operates with a single 2.7-3.6V power supply. The SST25VF512A device is offered in both 8-lead SOIC and 8-contact WSON packages.

Key features

  • Single 2.7-3.6V Read and Write Operations
  • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
  • 33 MHz Max Clock Frequency
  • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
  • Low Power Consumption: – Active Read Current: 7 mA (typical) – Standby Current: 8 μA (typical)
  • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks
  • Fast Erase and Byte-Program: – Chip-Erase Time: 70 ms (typical) – Sector- or Block-Erase Time: 18 ms (typical) – Byte-Program Time: 14 μs (typical)
  • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
  • End-of-Write Detection – Software Status
  • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register
  • Software Write Protection – Write protection through Block-Protection bits in status register
  • Temperature Range – Commercial: 0℃ to +70℃ – Industrial: -40℃ to +85℃ – Extended: -20℃ to +85℃
  • All non-Pb (lead-free) devices are RoHS compliant

Alternatives

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